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| FMM5815GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES * * * * * High Output Power: P1dB = 31dBm (Typ.) High Gain: G1dB = 20dB (Typ.) High PAE: add = 25% (Typ.) Impedance Matched Zin/Zout = 50 0.25m PHEMT Technology DESCRIPTION The FMM5815GJ is a packaged, high-gain, high linearity, amplifier designed for operation in the17.7-19.7GHz frequency range. This amplifier has an input and output designed for use in 50 systems.This device is well suited for point-to-point communication applications. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Drain-Source Voltage Gate-Source Voltage Input Power Storage Temperature Operating Case Temperature Symbol VDD VGG Pin Tstg Top Condition Rating 10 -7.0 22 -55 to +125 -40 to +85 Unit V V dBm C C Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 6 volts. ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25C) Item Frequency Range Output Power at 1 dB G.C.P. Power Gain at 1 dB G.C.P. Drain Current at 1 dB G.C.P. Gate Current at 1 dB G.C.P. Power-Added Efficiency at 1 dB G.C.P. Input Return Loss Output Return Loss 3rd Order Intermodulation Distortion Symbol f P1dB G1dB Iddrf Iggrf add RLin RLout IM3 f = 10MHz, 2-Tone Test, Pout = 20dBm S.C.L. VDD = 6V VGG = -5V f = 17.7 ~ 19.7GHz IDD = 600mA (Typ.) ZS = ZL = 50 Conditions Min. 17.7 29 18 -30 Limits Typ. Max. 31 20 800 -12 25 -10 -6 -35 19.7 23 950 -15 Unit GHz dBm dB mA mA % dB dB dBc CASE STYLE: GJ G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level Edition 1.1 April 2002 1 FMM5815GJ-1 17.7-19.7GHz Power Amplifier MMIC OUTPUT POWER vs. FREQUENCY VDD = 6V VGG = -5V P1dB, G1dB vs. VDD VDD = 6V, VGG = -5V 34 32 Output power (dBm) 30 28 26 24 22 20 18 16 17.7GHz P1dB 18.7GHz P1dB 19.7GHz P1dB P1dB 17.7GHz G1dB 18.7GHz G1dB 19.7GHz G1dB 34 P1dB (dBm), G1dB (dB) 32 30 28 26 24 22 20 G1dB P1dB 8dBm 6dBm 4dBm 2dBm 0dBm -2dBm 18 17.5 18.0 18.5 19.0 19.5 20.0 4 5 VDD (V) 6 Frequency (GHz) OUTPUT POWER & add vs. INPUT POWER 34 VDD = 6V 32 VGG = -5V 17.7GHz Pout 18.7GHz Pout 30 19.7GHz Pout 17.7GHz add 28 18.7GHz add 19.7GHz add IM3, IM5 vs. OUTPUT POWER -20 V DD = 6V VGG = -5V f = 10MHz -30 17.7GHz IM3 18.7GHz IM3 19.7GHz IM3 17.7GHz IM5 -40 18.7GHz IM5 19.7GHz IM5 Pout IM3 (dBc), IM5 (dBc) 35 30 add Output Power (dBm) IM3 IM5 24 22 20 18 16 -2 0 2 4 6 8 add (%) 26 25 20 15 10 5 -50 -60 10 12 14 0 15 17 19 21 23 25 27 Total Output Power (dBm) Input Power (dBm) 2 FMM5815GJ-1 17.7-19.7GHz Power Amplifier MMIC S-PARAMETERS VDD = 6V, VGG = -5V S21 S12 MAG ANG MAG ANG 11.021 11.546 11.715 11.777 11.800 11.806 11.909 12.029 12.277 12.279 11.980 11.273 10.899 10.202 9.167 8.445 -38.3 -94.5 -132.5 -170.0 171.3 134.1 97.1 59.7 21.3 -18.5 -59.5 -99.4 -119.4 -157.6 145.1 107.3 .003 .004 .004 .004 .004 .004 .004 .004 .005 .005 .005 .005 .005 .004 .002 .001 -44.6 -83.3 -105.2 -135.1 -143.3 -176.7 160.5 133.8 108.7 81.8 53.1 22.3 -1.8 -40.2 -94.2 -143.2 FREQUENCY (MHZ) 17200 17500 17700 17900 18000 18200 18400 18600 18800 19000 19200 19400 19500 19700 20000 20200 S11 MAG .081 .180 .245 .302 .325 .362 .385 .399 .401 .398 .389 .389 .393 .426 .472 .475 S22 MAG .287 .319 .340 .362 .369 .392 .408 .418 .415 .398 .366 .331 .315 .293 .315 .315 ANG 19.3 -51.5 -81.8 -109.7 -123.5 -150.8 -179.4 150.9 117.4 80.6 39.8 -2.2 -23.0 -62.2 -117.1 -150.8 ANG -63.7 -105.9 -135.6 -165.2 -179.8 152.9 127.2 103.2 80.2 59.4 41.2 26.5 21.7 14.7 0.5 -13.6 Download S-Parameters, click here RECOMMENDED BIAS CIRCUIT 1000pF 50 VGG VDD 50 1000pF 3 2 RFin 1 1000pF 50 4 5 RFout 6 50 1000pF VGG VDD Note 1: The R/C networks are recommended on the bias supply lines, close to the package, to prevent video oscillations which could damage the module. Note 2: Bias point VDD can be connected at the input side or at the output: The two pins named VDD are internally connected. The same is true for VGG. 3 FMM5815GJ-1 17.7-19.7GHz Power Amplifier MMIC Case Style "GJ" Metal-Ceramic Hermetic Package 6-0.3 (0.012) 4-R 1.20.15 (0.047) 3.5 Max. (0.137) 1.30.15 (0.051) 3 110.15 (0.433) 15 (0.591) 7 (0.276) 3.8 (0.149) 4 5 6 7 (0.276) 0.9 (0.035) 1. 2. 3. 4. 5. 6. 7. VDD RFin VGG VGG RFout VDD GND (Body) Unit: mm(inches) 2 1 7 INDEX 1Min. (0.039) 60.15 (0.236) 120.15 (0.472) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not ingest. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 2002 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0402M200 4 |
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